dmp1022ufde d atasheet number: d s35477 rev. 1 2 - 3 1 of 8 www.diodes.com october 2017 ? diodes incorporated dm p1022 uf de 12v p - channel enhancement mode mosfet product summary b v dss r ds(on) m ax i d m ax t a = + 25c - 12 v 1 6 m ? gs = - 4.5v - 9.1a 2 1.5 m? @ v gs = - 2.5v - 7.9a 26 m ? @ v gs = - 1.8 v - 7.0a 32 m ? @ v gs = - 1.5 v - 6.3a description this mosfet i s designed specifically for use in battery management applications. features ? C ? 2 ? ? ? ? totally lead - free & fully rohs c om pliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability ? an automotive - compliant part is available under separate datasheet ( dm p1022 uf deq ) mechanical data ? ? case material: molded plastic, Dgreen molding compound. ? ? C ? ordering information (note 4 ) part number marking reel s ize (inches) quantity p er r eel dmp1 0 2 2 u fde - 7 p4 7 3,000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - a nd antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 2011 ~ 2 015 201 6 201 7 201 8 201 9 20 20 20 21 20 2 2 20 2 3 code y ~ c d e f g h i j k month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d bottom view pin out internal schematic p4 = product type marking code ym = date code marking y = year (ex: e = 2017 ) m = month (ex: 9 = september) u - dfn2020 - 6 (type e) bottom view pin1 not recommended for new design use dm p1005ufdf esd protected p4 y m d d d d 1 2 6 5 s s g 3 4 e4 d s g g ate protection diode
dmp1022ufde d atasheet number: d s35477 rev. 1 2 - 3 2 of 8 www.diodes.com october 2017 ? diodes incorporated dm p1022 uf de maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss - 12 v gate - source voltage v gss 8 v continuous drain current (note 6 ) v gs = - 4.5 v steady state t a = + 25c t a = + 70c i d - 9.1 - 7.2 a t<5s t a = + 25c t a = + 70c i d - 11.2 - 9.0 a pulsed drain curren t ( 10 dm - 90 a continuous source - drain diode current t a = + 25c t c = + 25 c i s - 2.5 - 7.1 a pulsed source - drain diode c urrent ( 10 sm - 50 a thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) t a = + 25c p d 0.66 w t a = + 70c 0.42 thermal resistance, junction to ambient (note 5 ) s teady s tate r ja 189 c/w t<5s 123 total power dissipation (note 6 ) t a = + 25c p d 2.03 w t a = + 70c 1. 3 thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 61 c/w t<5s 40 thermal resistance, junction to case (note 6 ) s teady s tate r j c 9.3 operating and storage temperature range t j, t stg - 55 to +150 c notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, s ingle sided. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal v ias to bottom layer 1 - inch square copper plate . not recommended for new design use dm p1005ufdf
dmp1022ufde d atasheet number: d s35477 rev. 1 2 - 3 3 of 8 www.diodes.com october 2017 ? diodes incorporated dm p1022 uf de electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit tes t condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 12 gs = 0v, i d = - 250 a j = + 25c ) i dss ds = - 12 v, v gs = 0v zero gate voltage drain current ( t j = + 5 5c ) (note 8 ) i dss ds = - 12 v, v gs = 0v gate - source leakage i gss gs = 5 v, v ds = 0v on characterist ics (note 7 ) gate threshold voltage v gs( th) - 0. 35 ds = v gs , i d = - 250 a gs (th) temperature coefficient gs (th ) / j d = - 250 a i d (on) - 10 gs = - 4. 5 v, v d s < - 5a static drain - source on - resistance r ds(on) gs = - 4. 5 v, i d = - 8.2a 15 21.5 v gs = - 2.5v, i d = - 7.2a 20 26 v gs = - 1.8v, i d = - 6.6a 23 32 v gs = - 1. 5 v, i d = - 1a 80 160 v gs = - 1. 2 v, i d = - 1a forward transfer admittance |y fs | ds = - 4 v, i d = - 8.2 a diode forward voltage v sd gs = 0v, i s = - 8 a dynamic characteristic s (note 8 ) input capacitance c iss ds = - 4 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g gs = - 5 v, v ds = - 4 v , i d = - 1 0 a total gate charge q g gs = - 4.5 v, v ds = - 4 v, i d = - 1 0 a gate - source charge q gs gd d( on ) ds = - 4 v, v g s = - 4.5 v, r g = 1 l = 0.4 d = - 9.8 a turn - on rise time t r d( off ) f body diode characteristic s diode forward voltage v sd gs = 0v, i s = - 9.8 a continuous source - drain diode current (note 6 ) i s a = +25c c = +25c pulse diode forward current (note 8 ) i sm rr s = - 9.8 a , di /d t = 100a/ a b rr notes: 7 . short duration pulse test used to minimize self - heating effect . 8 . guaranteed by design. not subject to production testing . not recommended for new design use dm p1005ufdf
dmp1022ufde d atasheet number: d s35477 rev. 1 2 - 3 4 of 8 www.diodes.com october 2017 ? diodes incorporated dm p1022 uf de 100s 61 c/w p (pk) , peak transient power (w) t1, pulse duration time (sec) not rec ommended for new design use dm p1005ufdf 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v , drain-source voltage (v) fig. 1 soa, safe operation area ds - i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100 s w p = 10 s w 0 10 20 30 40 50 60 70 80 90 100 t1, pulse duration time (sec) fig. 2 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 p , p e a k t r a n s i e n t p o i w e r ( w ) ( p k ) single pulse r = 61 c/w r = r * r t - t = p * r ? ?? ? ja ja(t) (t) ja j a ja(t) ? 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 1 r (t)=r(t) * r ?? ja ja r =61 C /w duty cycle, d=t1/ t2 ? ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse
dmp1022ufde d atasheet number: d s35477 rev. 1 2 - 3 5 of 8 www.diodes.com october 2017 ? diodes incorporated dm p1022 uf de ( a ) not recommended for new design use dm p1005ufdf 0 5 10 15 20 25 30 -v , drain -source voltage(v) fig. 4 typical output characteristics ds 0 1 2 3 4 5 - i , d r a i n c u r r e n t ( a ) d v = -1.5v gs v = -1.2v gs v = -1.8v gs v = -2.0v gs v = -2.5v gs v = -4.5v gs v = -8.0v gs 0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 -v , gate-source voltage (v) gs fig. 5 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 -i , drain source current fig. 6 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.010 0.015 0.020 0.025 0.030 0 4 8 12 16 20 -i , drain source current (a) fig. 7 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v gs t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 8 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.01 0.02 0.03 0.04 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 9 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v i = a gs d -10 v = .5v i = a gs d -2 -5
dmp1022ufde d atasheet number: d s35477 rev. 1 2 - 3 6 of 8 www.diodes.com october 2017 ? diodes incorporated dm p1022 uf de 100 1,000 10,000 100,000 0 2 4 6 8 10 12 - v , drain - source voltage(v) fig. 13 typical drain - source leakage current vs. voltage ds - i , l e a k a g e c u r r e n t ( n a ) d s s t = 150c a t = 125c a t = 85c a t = 25c a - i dss , leakage cur rent ( n a) ( c) not recommended for new d esign use dm p1005ufdf 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 t , ambient temperature ( C ) fig. 10 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 4 8 12 16 20 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) fig. 11 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s 0 500 1,000 1,500 2,000 2,500 3,000 3,500 4,000 0 3 6 9 12 15 -v , drain-source voltage (v) fig. 12 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e ( p f ) t c oss c rss f = 1mhz c iss 0 2 4 6 8 0 5 10 15 20 25 30 35 40 45 50 q , total gate charge (nc) fig. 14 gate-charge characteristics g v , g a t e - s o u r c e v o l t a g e ( v ) g s
dmp1022ufde d atasheet number: d s35477 rev. 1 2 - 3 7 of 8 www.diodes.com october 2017 ? diodes incorporated dm p1022 uf de package outline dimensions please see http://www.diodes.com/package - outli nes.html for the latest version. suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 ( type e ) dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 ? ? ? ? b 0.25 0.35 0.30 b1 0.185 0.285 0.235 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 e 1.95 2.05 2.00 e2 1.40 1.60 1.50 e ? ? ? ? l 0.25 0.35 0.30 l1 0.82 0.92 0.87 k1 ? ? ? ? k2 ? ? ? ? z ? ? ? ? all dimensions in mm dimensions value (in mm) c 0.650 x 0.400 x1 0.285 x2 1.050 y 0.500 y1 0.920 y2 1.600 y3 2.300 u - dfn2020 - 6 ( type e ) u - dfn2020 - 6 ( type e ) not recommended for new design use dm p1005ufdf a1 z(4x) b1 l1 k1 k2 d d2 e e b(6x) l(2x) e2 a a3 x1 y3 x (6x) c x2 y1 y2 y (2x)
dmp1022ufde d atasheet number: d s35477 rev. 1 2 - 3 8 of 8 www.diodes.com october 2017 ? diodes incorporated dm p1022 uf de important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applic ations shall assume all risks of such use and will agree to hold diodes incorporated and all the compan ies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should cust omers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s a nd markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is t he final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support de vices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonab ly expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulat ory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2017 , diodes incorporated www.diodes.com not recommended for new design use dm p1005ufdf
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